Minimum DC Current Gain:
30
Transistor Type:
PNP
Dimensions:
3.04 x 2.64 x 1.11mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
225 mW
Maximum Collector Base Voltage:
-350 V dc
Maximum Collector Emitter Voltage:
-350 V
Maximum Operating Frequency:
20 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
-500 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
500 mA
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
350 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 50mA, 10V
Frequency - Transition:
200MHz
title:
MMBT6520LT1G
REACH Status:
REACH Unaffected
edacadModel:
MMBT6520LT1G Models
edacadModelUrl:
/en/models/1749018
Transistor Type:
PNP
Vce Saturation (Max) @ Ib, Ic:
1V @ 5mA, 50mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
12 Weeks
Current - Collector Cutoff (Max):
50nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Packaging:
Tape & Reel (TR)
Power - Max:
225 mW
Base Product Number:
MMBT6520
ECCN:
EAR99
