Minimum DC Current Gain:
60, 120
Transistor Type:
NPN
Dimensions:
3.04 x 1.4 x 1.01mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
225 mW
Maximum Collector Base Voltage:
30 V dc
Maximum Collector Emitter Voltage:
25 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
3 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
4 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
-
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
25V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 4mA, 10V
Noise Figure (dB Typ @ f):
-
Frequency - Transition:
650MHz
title:
MMBTH10LT1G
REACH Status:
REACH Unaffected
edacadModel:
MMBTH10LT1G Models
Gain:
-
edacadModelUrl:
/en/models/919633
Manufacturer:
onsemi
Transistor Type:
NPN
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
26 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Packaging:
Tape & Reel (TR)
Power - Max:
225mW
Base Product Number:
MMBTH10
ECCN:
EAR99
