Transistor Type:
NPN
Dimensions:
15.8 x 5 x 20.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
200 W
Maximum Collector Base Voltage:
250 V dc
Maximum Collector Emitter Voltage:
250 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-3P
Number of Elements per Chip:
1
Maximum DC Collector Current:
15 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
15 A
HTSUS:
8541.29.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
250 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
75 @ 3A, 5V
edacadModel:
NJW3281G Models
Frequency - Transition:
30MHz
Vce Saturation (Max) @ Ib, Ic:
600mV @ 800mA, 8A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1853553
Transistor Type:
NPN
Package:
Tube
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
15 Weeks
Current - Collector Cutoff (Max):
50µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3P-3L
Power - Max:
200 W
Base Product Number:
NJW3281
ECCN:
EAR99
