Transistor Type:
NPN
Dimensions:
10.28 x 4.82 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
90 W
Maximum Collector Base Voltage:
80 V dc
Maximum Collector Emitter Voltage:
80 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
10 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
10 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
80 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 4A, 2V
Frequency - Transition:
1.5MHz
title:
BD809G
REACH Status:
REACH Unaffected
edacadModel:
BD809G Models
edacadModelUrl:
/en/models/1476187
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
1.1V @ 300mA, 3A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
1mA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Packaging:
Tube
Power - Max:
90 W
Base Product Number:
BD809
ECCN:
EAR99
