onsemi MMBT2369LT1G NPN Transistor, 200 mA, 15 V, 3-Pin SOT-23

MMBT2369LT1G onsemi  NPN Transistor, 200 mA, 15 V, 3-Pin SOT-23
MMBT2369LT1G
MMBT2369LT1G
onsemi

Product Information

Transistor Type:
NPN
Dimensions:
0.94 x 2.9 x 1.3mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 mW
Maximum Collector Base Voltage:
40 V
Maximum Collector Emitter Voltage:
15 V
Maximum Emitter Base Voltage:
4.5 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
200 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
200 mA
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
15 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 10mA, 350mV
edacadModel:
MMBT2369LT1G Models
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
250mV @ 1mA, 10mA
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/919597
Transistor Type:
NPN
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
400nA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Power - Max:
225 mW
Base Product Number:
MMBT2369
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is NPN Transistor 200 mA 15 V 3-Pin SOT-23 manufactured by onsemi. The manufacturer part number is MMBT2369LT1G. The transistor is a npn type. The given dimensions of the product include 0.94 x 2.9 x 1.3mm. The product is available in surface mount configuration. Provides up to 300 mw maximum power dissipation. Additionally, it has 40 v maximum collector base voltage. Whereas features a 15 v of collector emitter voltage (max). It features a 4.5 v of maximum emitter base voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 200 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 200 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 15 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 40 @ 10ma, 350mv is the minimum DC current gain at given voltage. The 250mv @ 1ma, 10ma is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 400na is the maximum current at collector cutoff. sot-23-3 (to-236) is the supplier device package value. The maximum power of the product is 225 mw. Moreover, it corresponds to mmbt2369, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Mold Compound 02/Apr/2020(PCN Assembly/Origin)
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SOT23 16/Sep/2016(PCN Design/Specification)
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Copper Wire 08/Jun/2009(PCN Design/Specification)
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Mult Dev EOL 01/Oct/2021(PCN Obsolescence/ EOL)
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MMBT2369L,AL(Datasheets)

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