onsemi MJE5731G PNP Transistor, 1 A, 350 V, 3-Pin TO-220

MJE5731G onsemi  PNP Transistor, 1 A, 350 V, 3-Pin TO-220
MJE5731G
onsemi

Product Information

Minimum DC Current Gain:
30
Transistor Type:
PNP
Dimensions:
10.28 x 4.82 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Maximum Collector Base Voltage:
350 V dc
Maximum Collector Emitter Voltage:
-350 V
Maximum Operating Frequency:
2 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
-1 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
1 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
350 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 300mA, 10V
edacadModel:
MJE5731G Models
Frequency - Transition:
10MHz
Vce Saturation (Max) @ Ib, Ic:
1V @ 200mA, 1A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1481820
Transistor Type:
PNP
Package:
Tube
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
12 Weeks
Current - Collector Cutoff (Max):
1mA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Power - Max:
40 W
Base Product Number:
MJE5731
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is PNP Transistor 1 A 350 V 3-Pin TO-220 manufactured by onsemi. The manufacturer part number is MJE5731G. It features up to 30 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 10.28 x 4.82 x 15.75mm. The product is available in through hole configuration. Provides up to 40 w maximum power dissipation. Additionally, it has 350 v dc maximum collector base voltage. Whereas features a -350 v of collector emitter voltage (max). It carries 2 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of to-220. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of -1 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 1 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 350 v. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Furthermore, 30 @ 300ma, 10v is the minimum DC current gain at given voltage. The transition frequency of the product is 10mhz. The 1v @ 200ma, 1a is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in tube package . Its typical moisture sensitivity level is not applicable. It has a long 12 weeks standard lead time. In addition, 1ma is the maximum current at collector cutoff. to-220 is the supplier device package value. The maximum power of the product is 40 w. Moreover, it corresponds to mje5731, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev 30/Mar/2023(PCN Assembly/Origin)
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MJE5730, 31(A)(Datasheets)
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TO-220 Case Outline Update 18/Sep/2014(PCN Design/Specification)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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You will get a confirmation email regarding your order of onsemi MJE5731G PNP Transistor, 1 A, 350 V, 3-Pin TO-220. You can also check on our website or by contacting our customer support team for further order details on onsemi MJE5731G PNP Transistor, 1 A, 350 V, 3-Pin TO-220.
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