Transistor Type:
NPN
Dimensions:
9.28 x 10.28 x 4.82mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
50 W
Maximum Collector Base Voltage:
150 V
Maximum Collector Emitter Voltage:
150 V
Maximum Operating Frequency:
30 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Maximum DC Collector Current:
8 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
8 A
HTSUS:
8541.29.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
150 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 4A, 2V
edacadModel:
MJE15030G Models
Frequency - Transition:
30MHz
Vce Saturation (Max) @ Ib, Ic:
500mV @ 100mA, 1A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/919491
Transistor Type:
NPN
Package:
Tube
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
14 Weeks
Current - Collector Cutoff (Max):
100µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Power - Max:
50 W
Base Product Number:
MJE15030
ECCN:
EAR99
