onsemi 2N5884G PNP Transistor, 25 A, 80 V, 2-Pin TO-204AA

2N5884G onsemi  PNP Transistor, 25 A, 80 V, 2-Pin TO-204AA
2N5884G
2N5884G
onsemi

Product Information

Transistor Type:
PNP
Dimensions:
39.37 x 26.67 x 8.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
200 W
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
-80 V
Maximum Operating Frequency:
1 MHz
Pin Count:
2
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-204AA
Number of Elements per Chip:
1
Maximum DC Collector Current:
-25 A
Maximum Operating Temperature:
+200 °C
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
25 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
80 V
Operating Temperature:
-65°C ~ 200°C (TJ)
Package / Case:
TO-204AA, TO-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 10A, 4V
Frequency - Transition:
4MHz
REACH Status:
REACH Unaffected
edacadModel:
2N5884G Models
edacadModelUrl:
/en/models/918247
Transistor Type:
PNP
Vce Saturation (Max) @ Ib, Ic:
4V @ 6.25A, 25A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
2mA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-204 (TO-3)
Packaging:
Tray
Power - Max:
200 W
Base Product Number:
2N5884
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is PNP Transistor 25 A 80 V 2-Pin TO-204AA manufactured by onsemi. The manufacturer part number is 2N5884G. The transistor is a pnp type. The given dimensions of the product include 39.37 x 26.67 x 8.51mm. The product is available in through hole configuration. Provides up to 200 w maximum power dissipation. Additionally, it has 80 v maximum collector base voltage. Whereas features a -80 v of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. It contains 2 pins. It features a 5 v of maximum emitter base voltage. The package is a sort of to-204aa. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of -25 a. It has a maximum operating temperature of +200 °c. The product offers single transistor configuration. The maximum collector current includes 25 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 80 v. The product has -65°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-204aa, to-3. Furthermore, 20 @ 10a, 4v is the minimum DC current gain at given voltage. The transition frequency of the product is 4mhz. In addition, it is reach unaffected. The 4v @ 6.25a, 25a is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 2ma is the maximum current at collector cutoff. to-204 (to-3) is the supplier device package value. In addition, tray is the available packaging type of the product. The maximum power of the product is 200 w. Moreover, it corresponds to 2n5884, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev EOL 08/Jul/2021(PCN Obsolescence/ EOL)
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2N5883-5886(Datasheets)
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onsemi RoHS(Environmental Information)

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