onsemi MMBT2222ALT3G NPN Transistor, 600 mA, 40 V, 3-Pin SOT-23

MMBT2222ALT3G onsemi  NPN Transistor, 600 mA, 40 V, 3-Pin SOT-23
MMBT2222ALT3G
MMBT2222ALT3G
ET21459434
onsemi

Product Information

Minimum DC Current Gain:
100
Transistor Type:
NPN
Dimensions:
3.04 x 1.4 x 1.01mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
225 mW
Maximum Collector Base Voltage:
75 V
Maximum Collector Emitter Voltage:
40 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
600 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
600 mA
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
40 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Frequency - Transition:
300MHz
title:
MMBT2222ALT3G
REACH Status:
REACH Unaffected
edacadModel:
MMBT2222ALT3G Models
edacadModelUrl:
/en/models/1481928
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
12 Weeks
Current - Collector Cutoff (Max):
10nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Packaging:
Tape & Reel (TR)
Power - Max:
300 mW
Base Product Number:
MMBT2222
ECCN:
EAR99
Checking for live stock

This is NPN Transistor 600 mA 40 V 3-Pin SOT-23 manufactured by onsemi. The manufacturer part number is MMBT2222ALT3G. It features up to 100 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 3.04 x 1.4 x 1.01mm. The product is available in surface mount configuration. Provides up to 225 mw maximum power dissipation. Additionally, it has 75 v maximum collector base voltage. Whereas features a 40 v of collector emitter voltage (max). It carries 100 mhz of maximum operating frequency. It features a 6 v of maximum emitter base voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 600 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 600 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 40 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 100 @ 150ma, 10v is the minimum DC current gain at given voltage. The transition frequency of the product is 300mhz. In addition, it is reach unaffected. The 1v @ 50ma, 500ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). It has a long 12 weeks standard lead time. In addition, 10na (icbo) is the maximum current at collector cutoff. sot-23-3 (to-236) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 300 mw. Moreover, it corresponds to mmbt2222, a base product number of the product. The product is designated with the ear99 code number.

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ESD Control Selection Guide V1(Technical Reference)
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MMBT2222L, MMBT2222AL, SMMBT2222AL, General Purpose NPN Bipolar Transistors Data Sheet(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Mult Dev Wafer Add 16/Nov/2018(PCN Assembly/Origin)
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Gold to Copper Wire 08/May/2007(PCN Design/Specification)
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Copper Wire Update 10/Sep/2015(PCN Design/Specification)
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MMBT/SMMBT2222(A)L Datasheet(Datasheets)

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