onsemi BC33740TA NPN Transistor, 800 mA, 45 V, 3-Pin TO-92

BC33740TA onsemi  NPN Transistor, 800 mA, 45 V, 3-Pin TO-92
BC33740TA
BC33740TA
onsemi

Product Information

Transistor Type:
NPN
Dimensions:
5.33 x 5.2 x 4.19mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Collector Emitter Voltage:
45 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
800 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
800 mA
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
45 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
250 @ 100mA, 1V
edacadModel:
BC33740TA Models
Frequency - Transition:
100MHz
Vce Saturation (Max) @ Ib, Ic:
700mV @ 50mA, 500mA
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/974180
Transistor Type:
NPN
Package:
Cut Tape (CT)
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
10 Weeks
Current - Collector Cutoff (Max):
100nA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
625 mW
Base Product Number:
BC33740
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is NPN Transistor 800 mA 45 V 3-Pin TO-92 manufactured by onsemi. The manufacturer part number is BC33740TA. The transistor is a npn type. The given dimensions of the product include 5.33 x 5.2 x 4.19mm. The product is available in through hole configuration. Provides up to 625 mw maximum power dissipation. Whereas features a 45 v of collector emitter voltage (max). It carries 100 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of to-92. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 800 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 800 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 45 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 250 @ 100ma, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The 700mv @ 50ma, 500ma is the maximum Vce saturation. In addition, it is reach unaffected. It is shipped in cut tape (ct) package . Its typical moisture sensitivity level is not applicable. It has a long 10 weeks standard lead time. In addition, 100na is the maximum current at collector cutoff. to-92-3 is the supplier device package value. The maximum power of the product is 625 mw. Moreover, it corresponds to bc33740, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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Mult Dev Assembly Chgs 17/Nov/2020(PCN Assembly/Origin)
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Copper Lead Frame 12/Oct/2007(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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Mult Devices 24/Oct/2017(PCN Packaging)

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FAQs

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