onsemi MMBT2907ALT1G PNP Transistor, 1.2 A, 60 V, 3-Pin SOT-23

MMBT2907ALT1G onsemi  PNP Transistor, 1.2 A, 60 V, 3-Pin SOT-23
MMBT2907ALT1G
MMBT2907ALT1G
ET21455835
ET21455835
onsemi

Product Information

Minimum DC Current Gain:
100
Transistor Type:
PNP
Dimensions:
3.04 x 1.4 x 1.01mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
350 mW
Maximum Collector Base Voltage:
-60 V dc
Maximum Collector Emitter Voltage:
-60 V
Maximum Emitter Base Voltage:
-5 V dc
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
-600 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
600 mA
HTSUS:
8541.21.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
60 V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Frequency - Transition:
200MHz
REACH Status:
REACH Unaffected
edacadModel:
MMBT2907ALT1G Models
edacadModelUrl:
/en/models/919599
Transistor Type:
PNP
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 50mA, 500mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
21 Weeks
Current - Collector Cutoff (Max):
10nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Packaging:
Tape & Reel (TR)
Power - Max:
300 mW
Base Product Number:
MMBT2907
ECCN:
EAR99
Checking for live stock

This is PNP Transistor 1.2 A 60 V 3-Pin SOT-23 manufactured by onsemi. The manufacturer part number is MMBT2907ALT1G. It features up to 100 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 3.04 x 1.4 x 1.01mm. The product is available in surface mount configuration. Provides up to 350 mw maximum power dissipation. Additionally, it has -60 v dc maximum collector base voltage. Whereas features a -60 v of collector emitter voltage (max). It features a -5 v dc of maximum emitter base voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of -600 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 600 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 60 v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 100 @ 150ma, 10v is the minimum DC current gain at given voltage. The transition frequency of the product is 200mhz. In addition, it is reach unaffected. The 1.6v @ 50ma, 500ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). It has a long 21 weeks standard lead time. In addition, 10na (icbo) is the maximum current at collector cutoff. sot-23-3 (to-236) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 300 mw. Moreover, it corresponds to mmbt2907, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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onsemi RoHS(Environmental Information)
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Mult Changes 09/Sep/2020(PCN Assembly/Origin)
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Glue Mount Process 11/July/2008(PCN Design/Specification)
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Copper Wire Update 10/Sep/2015(PCN Design/Specification)
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MMBT,SMMBT2907AL(Datasheets)

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