Transistor Type:
NPN
Dimensions:
9.28 x 10.28 x 4.82mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
2 W
Maximum Collector Base Voltage:
250 V
Maximum Collector Emitter Voltage:
250 V
Maximum Operating Frequency:
30 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Maximum DC Collector Current:
8 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
8 A
HTSUS:
8541.29.0075
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
250 V
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
10 @ 2A, 5V
Frequency - Transition:
30MHz
title:
MJE15032G
REACH Status:
REACH Unaffected
edacadModel:
MJE15032G Models
edacadModelUrl:
/en/models/919493
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
500mV @ 100mA, 1A
Moisture Sensitivity Level (MSL):
Not Applicable
standardLeadTime:
10 Weeks
Current - Collector Cutoff (Max):
10µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Packaging:
Tube
Power - Max:
50 W
Base Product Number:
MJE15032
ECCN:
EAR99
