Toshiba, RN1107 NPN Digital Transistor, 100 mA 50 V 10 kΩ, Ratio Of 0.21, 1, 3-Pin ESM

Enrgtech Part No: ET17547811
|
Manufacturer Part No:
RN1107(F)
|
Manufacturer: Toshiba

RN1107-F- Toshiba, RN1107 NPN Digital Transistor, 100 mA 50 V 10 kΩ, Ratio Of 0.21, 1, 3-Pin ESM

Product Information

Minimum DC Current Gain:

Transistor Type:

NPN

Dimensions:

1.6 x 0.8 x 0.7mm

Mounting Type:

Surface Mount

Maximum Collector Emitter Voltage:

50 V

Maximum Emitter Base Voltage:

6 V

Package Type:

ESM

Number of Elements per Chip:

Maximum DC Collector Current:

100 mA

Typical Resistor Ratio:

0.21, 1

Transistor Configuration:

Single

Maximum Operating Temperature:

+150 °C

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This is RN1107 NPN Digital Transistor 100 mA 50 V 10 kΩ Ratio Of 0.21 1 3-Pin ESM manufactured by Toshiba. The manufacturer part number is RN1107(F). It features up to 80 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 1.6 x 0.8 x 0.7mm. The product is available in surface mount configuration. Whereas features a 50 v of collector emitter voltage (max). It features a 6 v of maximum emitter base voltage. The package is a sort of esm. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 100 ma. In addition, it has a typical 0.21, 1 resistor ratio . The product offers single transistor configuration. It has a maximum operating temperature of +150 °c. It contains 3 pins. Whereas, it has a typical 10 kω input resistor .

NPN Digital Transistor Datasheet(Technical Reference)

ESD Control Selection Guide V1(Technical Reference)

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Toshiba, RN1107 NPN Digital Transistor, 100 mA 50 V 10 kΩ, Ratio Of 0.21, 1, 3-Pin ESM

RN1107(F)

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