Toshiba 2SA1986-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PN

2SA1986-O-Q- Toshiba 2SA1986-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PN
2SA1986-O(Q)
Toshiba

Product Information

Minimum DC Current Gain:
55
Transistor Type:
PNP
Dimensions:
19 x 15.9 x 4.8mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
150 W
Maximum Collector Base Voltage:
230 V
Maximum Collector Emitter Voltage:
-230 V
Maximum Operating Frequency:
30 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-3PN
Number of Elements per Chip:
1
Maximum DC Collector Current:
-15 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is PNP Transistor 15 A 230 V 3-Pin TO-3PN manufactured by Toshiba. The manufacturer part number is 2SA1986-O(Q). It features up to 55 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 19 x 15.9 x 4.8mm. The product is available in through hole configuration. Provides up to 150 w maximum power dissipation. Additionally, it has 230 v maximum collector base voltage. Whereas features a -230 v of collector emitter voltage (max). It carries 30 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of to-3pn. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of -15 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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Semi,Descrete,Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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