Toshiba 2SA1943N(S1,E,S) PNP Transistor, 15 A, 230 V, 3-Pin TO-3P

2SA1943N-S1-E-S- Toshiba 2SA1943N(S1,E,S) PNP Transistor, 15 A, 230 V, 3-Pin TO-3P
2SA1943N(S1,E,S)
2SA1943N(S1,E,S)
Toshiba

Product Information

Minimum DC Current Gain:
55
Transistor Type:
PNP
Dimensions:
15.5 x 4.5 x 20mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
150 W
Maximum Collector Base Voltage:
-230 V
Maximum Collector Emitter Voltage:
-230 V
Maximum Emitter Base Voltage:
-5 V
Package Type:
TO-3P
Number of Elements per Chip:
1
Maximum DC Collector Current:
-15 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is PNP Transistor 15 A 230 V 3-Pin TO-3P manufactured by Toshiba. The manufacturer part number is 2SA1943N(S1,E,S). It features up to 55 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 15.5 x 4.5 x 20mm. The product is available in through hole configuration. Provides up to 150 w maximum power dissipation. Additionally, it has -230 v maximum collector base voltage. Whereas features a -230 v of collector emitter voltage (max). It features a -5 v of maximum emitter base voltage. The package is a sort of to-3p. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of -15 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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2SA1943N, Silicon PNP Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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