Toshiba TTC3710B,S4X(S NPN Transistor, 12 A, 80 V, 3-Pin TO-220SIS

TTC3710B-S4X-S Toshiba TTC3710B,S4X(S NPN Transistor, 12 A, 80 V, 3-Pin TO-220SIS
TTC3710B,S4X(S
Toshiba

Product Information

Minimum DC Current Gain:
120
Transistor Type:
NPN
Dimensions:
10 x 4.5 x 15mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
30 W
Maximum Collector Base Voltage:
80 V
Maximum Collector Emitter Voltage:
80 V
Maximum Operating Frequency:
80 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
TO-220SIS
Number of Elements per Chip:
1
Maximum DC Collector Current:
12 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is NPN Transistor 12 A 80 V 3-Pin TO-220SIS manufactured by Toshiba. The manufacturer part number is TTC3710B,S4X(S. It features up to 120 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 10 x 4.5 x 15mm. The product is available in through hole configuration. Provides up to 30 w maximum power dissipation. Additionally, it has 80 v maximum collector base voltage. Whereas features a 80 v of collector emitter voltage (max). It carries 80 mhz of maximum operating frequency. It features a 6 v of maximum emitter base voltage. The package is a sort of to-220sis. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 12 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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TTC3710B High Current NPN Transistor Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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