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Toshiba, RN1423(TE85L,F) NPN Digital Transistor, 800 mA 50 V 4.7 kΩ, Ratio Of 1, 3-Pin SOT-23

RN1423-TE85L-F- Toshiba, RN1423(TE85L,F) NPN Digital Transistor, 800 mA 50 V 4.7 kΩ, Ratio Of 1, 3-Pin SOT-23
Toshiba

Product Information

Base-Emitter Resistor:
4.7kΩ
Transistor Type:
NPN
Dimensions:
2.9 x 1.5 x 1.1mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
200 mW
Maximum Collector Emitter Voltage:
50 V
Maximum Emitter Base Voltage:
10 V
Package Type:
TO-236MOD (SC-59)
Number of Elements per Chip:
1
Maximum DC Collector Current:
800 mA
Typical Resistor Ratio:
1
Transistor Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Typical Input Resistor:
4.7 kΩ
RoHs Compliant
Checking for live stock

This is NPN Digital Transistor 800 mA 50 V 4.7 kΩ Ratio Of 1 3-Pin SOT-23 manufactured by Toshiba. The manufacturer part number is RN1423(TE85L,F). It has about 4.7kω base-emitter resistor . The transistor is a npn type. The given dimensions of the product include 2.9 x 1.5 x 1.1mm. The product is available in surface mount configuration. Provides up to 200 mw maximum power dissipation. Whereas features a 50 v of collector emitter voltage (max). It features a 10 v of maximum emitter base voltage. The package is a sort of to-236mod (sc-59). It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 800 ma. In addition, it has a typical 1 resistor ratio . The product offers single transistor configuration. It has a maximum operating temperature of +150 °c. It contains 3 pins. Whereas, it has a typical 4.7 kω input resistor .

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RN142x NPN Transistors with Bias Resistors Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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