Toshiba HN1A01FU-GR,LF(T Dual PNP Transistor, 150 mA, 50 V, 6-Pin SOT-363

HN1A01FU-GR-LF-T Toshiba HN1A01FU-GR,LF(T Dual PNP Transistor, 150 mA, 50 V, 6-Pin SOT-363
HN1A01FU-GR,LF(T
Toshiba

Product Information

Minimum DC Current Gain:
120
Transistor Type:
PNP
Dimensions:
2 x 1.25 x 0.9mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
200 mW
Maximum Collector Base Voltage:
-50 V
Maximum Collector Emitter Voltage:
-50 V
Maximum Operating Frequency:
80 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Maximum DC Collector Current:
-150 mA
Maximum Operating Temperature:
+125 °C
Pin Count:
6
RoHs Compliant
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This is Dual PNP Transistor 150 mA 50 V 6-Pin SOT-363 manufactured by Toshiba. The manufacturer part number is HN1A01FU-GR,LF(T. It features up to 120 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 2 x 1.25 x 0.9mm. The product is available in surface mount configuration. Provides up to 200 mw maximum power dissipation. Additionally, it has -50 v maximum collector base voltage. Whereas features a -50 v of collector emitter voltage (max). It carries 80 mhz of maximum operating frequency. It features a -5 v of maximum emitter base voltage. The package is a sort of sot-363 (sc-88). It consists of 2 elements per chip. Moreover, it has a maximum DC collector current of -150 ma. It has a maximum operating temperature of +125 °c. It contains 6 pins.

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HN1A01FU Dual AF Gen Purp PNP Transistor Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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