Infineon BFS17PE6327HTSA1 NPN RF Bipolar Transistor, 25 mA, 15 V, 3-Pin SOT-23

BFS17PE6327HTSA1 Infineon  NPN RF Bipolar Transistor, 25 mA, 15 V, 3-Pin SOT-23
Infineon

Product Information

Transistor Type:
NPN
Dimensions:
2.9 x 1.3 x 0.9mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
280 mW
Maximum Collector Emitter Voltage:
15 V
Maximum Operating Frequency:
2.5 GHz
Maximum Emitter Base Voltage:
2.5 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
25 mA
Maximum Collector Base Voltage:
25 V
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is NPN RF Bipolar Transistor 25 mA 15 V 3-Pin SOT-23 manufactured by Infineon. The manufacturer part number is BFS17PE6327HTSA1. The transistor is a npn type. The given dimensions of the product include 2.9 x 1.3 x 0.9mm. The product is available in surface mount configuration. Provides up to 280 mw maximum power dissipation. Whereas features a 15 v of collector emitter voltage (max). It carries 2.5 ghz of maximum operating frequency. It features a 2.5 v of maximum emitter base voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 25 ma. Additionally, it has 25 v maximum collector base voltage. It contains 3 pins. The product offers single transistor configuration.

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BFS17P NPN Silicon RF Transistor Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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