Infineon BFP640ESDH6327XTSA1 NPN SiGe Bipolar Transistor, 50 mA, 4.1 V, 4-Pin SOT-343

Enrgtech Part No: ET16792383
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Manufacturer Part No:
BFP640ESDH6327XTSA1
|
Manufacturer: Infineon

BFP640ESDH6327XTSA1 Infineon NPN SiGe Bipolar Transistor, 50 mA, 4.1 V, 4-Pin SOT-343

Product Information

Transistor Type:

NPN

Dimensions:

2 x 1.25 x 0.9mm

Mounting Type:

Surface Mount

Maximum Power Dissipation:

200 mW

Maximum Collector Base Voltage:

4.8 V

Maximum Collector Emitter Voltage:

4.1 V

Maximum Operating Frequency:

45 GHz

Maximum Emitter Base Voltage:

0.5 V

Package Type:

SOT-343

Number of Elements per Chip:

Maximum DC Collector Current:

50 mA

Maximum Operating Temperature:

+150 °C

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This is NPN SiGe Bipolar Transistor 50 mA 4.1 V 4-Pin SOT-343 manufactured by Infineon. The manufacturer part number is BFP640ESDH6327XTSA1. The transistor is a npn type. The given dimensions of the product include 2 x 1.25 x 0.9mm. The product is available in surface mount configuration. Provides up to 200 mw maximum power dissipation. Additionally, it has 4.8 v maximum collector base voltage. Whereas features a 4.1 v of collector emitter voltage (max). It carries 45 ghz of maximum operating frequency. It features a 0.5 v of maximum emitter base voltage. The package is a sort of sot-343. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 50 ma. It has a maximum operating temperature of +150 °c. It contains 4 pins. The product offers single transistor configuration.

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Yes. Our products in Bipolar Transistors category are shipped in lowest possible time.

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Infineon BFP640ESDH6327XTSA1 NPN SiGe Bipolar Transistor, 50 mA, 4.1 V, 4-Pin SOT-343

BFP640ESDH6327XTSA1

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