Infineon BDP950H6327XTSA1 PNP Transistor, 3 A, 60 V SOT-223

BDP950H6327XTSA1 Infineon  PNP Transistor, 3 A, 60 V SOT-223
BDP950H6327XTSA1
Infineon

Product Information

Minimum DC Current Gain:
85
Transistor Type:
PNP
Dimensions:
6.5 x 3.5 x 1.5mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
5 W
Maximum Collector Base Voltage:
60 V
Maximum Collector Emitter Voltage:
-60 V
Pin Count:
3 + Tab
Maximum Emitter Base Voltage:
5 V
Package Type:
SOT-223 (SC-73)
Number of Elements per Chip:
1
Maximum DC Collector Current:
-3 A
Maximum Operating Temperature:
+150 °C
Transistor Configuration:
Single
RoHs Compliant
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This is PNP Transistor 3 A 60 V SOT-223 manufactured by Infineon. The manufacturer part number is BDP950H6327XTSA1. It features up to 85 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 6.5 x 3.5 x 1.5mm. The product is available in surface mount configuration. Provides up to 5 w maximum power dissipation. Additionally, it has 60 v maximum collector base voltage. Whereas features a -60 v of collector emitter voltage (max). It contains 3 + tab pins. It features a 5 v of maximum emitter base voltage. The package is a sort of sot-223 (sc-73). It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of -3 a. It has a maximum operating temperature of +150 °c. The product offers single transistor configuration.

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BDP948/950/954 PNP Silicon AF Power Transistors(Technical Reference)
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