Infineon BCW60DE6327HTSA1 NPN Bipolar Transistor, 100 mA, 32 V, 3-Pin SOT-23

BCW60DE6327HTSA1 Infineon  NPN Bipolar Transistor, 100 mA, 32 V, 3-Pin SOT-23
BCW60DE6327HTSA1
Infineon

Product Information

Minimum DC Current Gain:
380
Transistor Type:
NPN
Dimensions:
2.9 x 1.3 x 0.9mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
330 mW
Maximum Collector Base Voltage:
32 V
Maximum Collector Emitter Voltage:
32 V
Maximum Operating Frequency:
250 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
100 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
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This is NPN Bipolar Transistor 100 mA 32 V 3-Pin SOT-23 manufactured by Infineon. The manufacturer part number is BCW60DE6327HTSA1. It features up to 380 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 2.9 x 1.3 x 0.9mm. The product is available in surface mount configuration. Provides up to 330 mw maximum power dissipation. Additionally, it has 32 v maximum collector base voltage. Whereas features a 32 v of collector emitter voltage (max). It carries 250 mhz of maximum operating frequency. It features a 6 v of maximum emitter base voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 100 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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BCW60, BCX70 NPN Silicon AF Transistors Datasheet(Technical Reference)
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