Infineon BCV62CE6327HTSA1 Dual PNP Current Mirror Transistor, 100 mA, 30 V, 4-Pin SOT-143

BCV62CE6327HTSA1 Infineon  Dual PNP Current Mirror Transistor, 100 mA, 30 V, 4-Pin SOT-143
BCV62CE6327HTSA1
Infineon

Product Information

Minimum DC Current Gain:
420
Transistor Type:
PNP
Dimensions:
2.9 x 1.3 x 1mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 mW
Maximum Collector Base Voltage:
30 V
Maximum Collector Emitter Voltage:
-30 V
Maximum Operating Frequency:
250 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
SOT-143
Number of Elements per Chip:
2
Maximum DC Collector Current:
-100 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Current Mirror
RoHs Compliant
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This is Dual PNP Current Mirror Transistor 100 mA 30 V 4-Pin SOT-143 manufactured by Infineon. The manufacturer part number is BCV62CE6327HTSA1. It features up to 420 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 2.9 x 1.3 x 1mm. The product is available in surface mount configuration. Provides up to 300 mw maximum power dissipation. Additionally, it has 30 v maximum collector base voltage. Whereas features a -30 v of collector emitter voltage (max). It carries 250 mhz of maximum operating frequency. It features a 6 v of maximum emitter base voltage. The package is a sort of sot-143. It consists of 2 elements per chip. Moreover, it has a maximum DC collector current of -100 ma. It has a maximum operating temperature of +150 °c. It contains 4 pins. The product offers current mirror transistor configuration.

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ESD Control Selection Guide V1(Technical Reference)
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BCV62C PNP Silicon Double Transistor Data Sheet(Technical Reference)

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