Transistor Type:
NPN
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
450 mW
Maximum Collector Emitter Voltage:
45 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
100 mA
Maximum Collector Base Voltage:
50 V
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
SS9014
Detailed Description:
Bipolar (BJT) Transistor NPN 45V 100mA 270MHz 450mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 1mA, 5V
Transistor Type:
NPN
Frequency - Transition:
270MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
300mV @ 5mA, 100mA
Supplier Device Package:
TO-92-3
Voltage - Collector Emitter Breakdown (Max):
45V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
450mW
Customer Reference:
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
50nA (ICBO)
Manufacturer:
ON Semiconductor
