Transistor Type:
PNP
Dimensions:
8 x 3.25 x 11mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
20 W
Maximum Collector Emitter Voltage:
160 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
TO-126
Number of Elements per Chip:
1
Maximum DC Collector Current:
1.2 A
Maximum Collector Base Voltage:
-160 V
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
KSA1220
Detailed Description:
Bipolar (BJT) Transistor PNP 160V 1.2A 175MHz 1.2W Through Hole TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 300mA, 5V
Transistor Type:
PNP
Frequency - Transition:
175MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
700mV @ 200mA, 1A
Supplier Device Package:
TO-126
Voltage - Collector Emitter Breakdown (Max):
160V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
1.2W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
1.2A
Current - Collector Cutoff (Max):
1µA (ICBO)
Manufacturer:
ON Semiconductor
