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This is manufactured by ON Semiconductor. The manufacturer part number is FGA15N120ANTDTU-F109. The given dimensions of the product include 15.8 x 5 x 18.9mm. The product is available in through hole configuration. Provides up to 186 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). The package is a sort of to-3p. It consists of 1 elements per chip. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 30a. It features igbt npt and trench 1200v 30a 186w through hole to-3p. Features 2.4v @ 15v, 15a. Td (on/off) value of 15ns/160ns. The product has -55°c ~ 150°c (tj) operating temperature range. It carries standard input type. Moreover, the product comes in to-3p-3, sc-65-3. Features 120nc gate charge. Base Part Number: fga15n120. The maximum collector emitter breakdown voltage of the product is 1200v. It has a trr (reverse recovery time) of 330ns. Provide switching energy up to 3mj (on), 600µj (off). Test condition included 600v, 15a, 10ohm, 15v. The on semiconductor's product offers user-desired applications. Features an IGBT npt and trench type. With a current - collector pulsed of [Current - Collector Pulsed (lcm)] . to-3p is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 186w.
For more information please check the datasheets.
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