NXP PBSS5350SS,115 PNP Transistor, 3 A, 50 V, 3-Pin 8-SO

PBSS5350SS-115 NXP PBSS5350SS,115 PNP Transistor, 3 A, 50 V, 3-Pin 8-SO
NXP

Product Information

Dimensions:
5.2 x 4.8 x 4.2mm
Maximum Collector Emitter Saturation Voltage:
0.3 V
Width:
4.2mm
Transistor Configuration:
Single
Maximum Operating Frequency:
100 MHz
Package Type:
8-SO
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
PNP
Maximum Collector Base Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Maximum Emitter Base Voltage:
6 V
Length:
4.8mm
Maximum DC Collector Current:
3 A
Pin Count:
3
Minimum DC Current Gain:
100
Mounting Type:
Surface Mount
Maximum Power Dissipation:
0.83 W
Maximum Collector Emitter Voltage:
50 V
Height:
5.2mm
Minimum Operating Temperature:
-65 °C
RoHs Compliant
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This is PNP Transistor 3 A 50 V 3-Pin 8-SO manufactured by NXP. The manufacturer part number is PBSS5350SS,115. The given dimensions of the product include 5.2 x 4.8 x 4.2mm. The product has a maximum 0.3 v collector emitter saturation voltage . Furthermore, the product is 4.2mm wide. The product offers single transistor configuration. It carries 100 mhz of maximum operating frequency. The package is a sort of 8-so. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a pnp type. Additionally, it has 60 v maximum collector base voltage. In addition, the product has a maximum 1.2 v base emitter saturation voltage . It features a 6 v of maximum emitter base voltage. Its accurate length is 4.8mm. Moreover, it has a maximum DC collector current of 3 a. It contains 3 pins. It features up to 100 of minimum DC current gain. The product is available in surface mount configuration. Provides up to 0.83 w maximum power dissipation. Whereas features a 50 v of collector emitter voltage (max). In addition, the height is 5.2mm. Whereas, the minimum operating temperature of the product is -65 °c.

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Datasheet(Technical Reference)

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