NXP BFS505,115 NPN RF Bipolar Transistor, 0.018 A, 15 V, 3-Pin UMT

BFS505-115 NXP BFS505,115 NPN RF Bipolar Transistor, 0.018 A, 15 V, 3-Pin UMT
NXP

Product Information

Minimum DC Current Gain:
60
Transistor Type:
NPN
Dimensions:
1 x 2.2 x 1.35mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
0.15 W
Maximum Collector Base Voltage:
20 V
Maximum Collector Emitter Voltage:
15 V
Maximum Operating Frequency:
9000 MHz
Height:
1mm
Width:
1.35mm
Length:
2.2mm
Package Type:
UMT
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum DC Collector Current:
0.018 A
Maximum Emitter Base Voltage:
2.5 V
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is NPN RF Bipolar Transistor 0.018 A 15 V 3-Pin UMT manufactured by NXP. The manufacturer part number is BFS505,115. It features up to 60 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 1 x 2.2 x 1.35mm. The product is available in surface mount configuration. Provides up to 0.15 w maximum power dissipation. Additionally, it has 20 v maximum collector base voltage. Whereas features a 15 v of collector emitter voltage (max). It carries 9000 mhz of maximum operating frequency. In addition, the height is 1mm. Furthermore, the product is 1.35mm wide. Its accurate length is 2.2mm. The package is a sort of umt. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. Moreover, it has a maximum DC collector current of 0.018 a. It features a 2.5 v of maximum emitter base voltage. It has a maximum operating temperature of +175 °c. It contains 3 pins. The product offers single transistor configuration.

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BFS505 NPN 9 GHz wideband transistor Data Sheet(Technical Reference)

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