Toshiba, RN1102MFV(TPL3) NPN Digital Transistor, 100 mA 50 V 10 kΩ, Ratio Of 1, 3-Pin VESM

RN1102MFV-TPL3- Toshiba, RN1102MFV(TPL3) NPN Digital Transistor, 100 mA 50 V 10 kΩ, Ratio Of 1, 3-Pin VESM
Toshiba

Product Information

Base-Emitter Resistor:
10kΩ
Transistor Type:
NPN
Dimensions:
1.2 x 0.8 x 0.5mm
Mounting Type:
Surface Mount
Maximum Collector Emitter Voltage:
50 V
Maximum Emitter Base Voltage:
10 V
Package Type:
VESM
Number of Elements per Chip:
1
Maximum DC Collector Current:
100 mA
Typical Resistor Ratio:
1
Transistor Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Typical Input Resistor:
10 kΩ
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This is NPN Digital Transistor 100 mA 50 V 10 kΩ Ratio Of 1 3-Pin VESM manufactured by Toshiba. The manufacturer part number is RN1102MFV(TPL3). It has about 10kω base-emitter resistor . The transistor is a npn type. The given dimensions of the product include 1.2 x 0.8 x 0.5mm. The product is available in surface mount configuration. Whereas features a 50 v of collector emitter voltage (max). It features a 10 v of maximum emitter base voltage. The package is a sort of vesm. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 100 ma. In addition, it has a typical 1 resistor ratio . The product offers single transistor configuration. It has a maximum operating temperature of +150 °c. It contains 3 pins. Whereas, it has a typical 10 kω input resistor .

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NPN Digital Transistor Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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