NXP BFR520T,115 NPN RF Bipolar Transistor, 0.07 A, 15 V, 3-Pin SMPAK

BFR520T-115 NXP BFR520T,115 NPN RF Bipolar Transistor, 0.07 A, 15 V, 3-Pin SMPAK
NXP

Product Information

Minimum DC Current Gain:
60
Transistor Type:
NPN
Dimensions:
0.85 x 1.8 x 0.9mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
0.15 W
Maximum Collector Base Voltage:
20 V
Maximum Collector Emitter Voltage:
15 V
Maximum Operating Frequency:
9000 MHz
Height:
0.85mm
Width:
0.9mm
Length:
1.8mm
Package Type:
SMPAK
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum DC Collector Current:
0.07 A
Maximum Emitter Base Voltage:
2.5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
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This is NPN RF Bipolar Transistor 0.07 A 15 V 3-Pin SMPAK manufactured by NXP. The manufacturer part number is BFR520T,115. It features up to 60 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 0.85 x 1.8 x 0.9mm. The product is available in surface mount configuration. Provides up to 0.15 w maximum power dissipation. Additionally, it has 20 v maximum collector base voltage. Whereas features a 15 v of collector emitter voltage (max). It carries 9000 mhz of maximum operating frequency. In addition, the height is 0.85mm. Furthermore, the product is 0.9mm wide. Its accurate length is 1.8mm. The package is a sort of smpak. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. Moreover, it has a maximum DC collector current of 0.07 a. It features a 2.5 v of maximum emitter base voltage. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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BFR520T NPN 9 GHz wideband transistor Data Sheet(Technical Reference)

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