Toshiba 2SA1163-BL(TE85L,F PNP Transistor, 0.1 A, 120 V, 3-Pin SC-59

2SA1163-BL-TE85L-F Toshiba 2SA1163-BL(TE85L,F PNP Transistor, 0.1 A, 120 V, 3-Pin SC-59
2SA1163-BL(TE85L,F
Toshiba

Product Information

Minimum DC Current Gain:
200
Transistor Type:
PNP
Dimensions:
2.9 x 1.5 x 1.1mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
150 mW
Maximum Collector Emitter Saturation Voltage:
-0.3 V
Maximum Collector Base Voltage:
-120 V
Maximum Collector Emitter Voltage:
120 V
Height:
1.1mm
Width:
1.5mm
Length:
2.9mm
Package Type:
SC-59
Number of Elements per Chip:
1
Maximum DC Collector Current:
0.1 A
Maximum Emitter Base Voltage:
-5 V
Transistor Material:
Si
Maximum Operating Temperature:
+125 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is PNP Transistor 0.1 A 120 V 3-Pin SC-59 manufactured by Toshiba. The manufacturer part number is 2SA1163-BL(TE85L,F. It features up to 200 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 2.9 x 1.5 x 1.1mm. The product is available in surface mount configuration. Provides up to 150 mw maximum power dissipation. The product has a maximum -0.3 v collector emitter saturation voltage . Additionally, it has -120 v maximum collector base voltage. Whereas features a 120 v of collector emitter voltage (max). In addition, the height is 1.1mm. Furthermore, the product is 1.5mm wide. Its accurate length is 2.9mm. The package is a sort of sc-59. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 0.1 a. It features a -5 v of maximum emitter base voltage. The transistor is manufactured from highly durable si material. It has a maximum operating temperature of +125 °c. It contains 3 pins. The product offers single transistor configuration.

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2SA1163, Silicon PNP Transistor(Technical Reference)

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