Infineon BFR 183 E6327 NPN Transistor, 0.065 A, 12 V, 3-Pin SOT-23

BFR-183-E6327 Infineon BFR 183 E6327 NPN Transistor, 0.065 A, 12 V, 3-Pin SOT-23
BFR 183 E6327
Infineon

Product Information

Minimum DC Current Gain:
70
Transistor Type:
NPN
Dimensions:
2.9 x 1.3 x 1mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
450 mW
Maximum Collector Base Voltage:
20 V
Maximum Collector Emitter Voltage:
12 V
Maximum Operating Frequency:
8 GHz
Height:
1mm
Width:
1.3mm
Length:
2.9mm
Package Type:
SOT-23
Maximum DC Collector Current:
0.065 A
Maximum Emitter Base Voltage:
2 V
Transistor Material:
Si
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is NPN Transistor 0.065 A 12 V 3-Pin SOT-23 manufactured by Infineon. The manufacturer part number is BFR 183 E6327. It features up to 70 of minimum DC current gain. The transistor is a npn type. The given dimensions of the product include 2.9 x 1.3 x 1mm. The product is available in surface mount configuration. Provides up to 450 mw maximum power dissipation. Additionally, it has 20 v maximum collector base voltage. Whereas features a 12 v of collector emitter voltage (max). It carries 8 ghz of maximum operating frequency. In addition, the height is 1mm. Furthermore, the product is 1.3mm wide. Its accurate length is 2.9mm. The package is a sort of sot-23. Moreover, it has a maximum DC collector current of 0.065 a. It features a 2 v of maximum emitter base voltage. The transistor is manufactured from highly durable si material. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.

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BFR183, Low Noise Silicon Bipolar RF Transistor(Technical Reference)

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