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Fairchild PN2222TF NPN Transistor, 0.6 A, 30 V, 3-Pin TO-92

PN2222TF Fairchild  NPN Transistor, 0.6 A, 30 V, 3-Pin TO-92
PN2222TF
Fairchild Semiconductor

Product Information

Dimensions:
5.2 x 4.19 x 5.33mm
Maximum Collector Emitter Saturation Voltage:
1 V
Width:
4.19mm
Transistor Configuration:
Single
Maximum Operating Frequency:
100 MHz
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
2 V
Maximum Emitter Base Voltage:
5 V
Length:
5.2mm
Maximum DC Collector Current:
0.6 A
Pin Count:
3
Minimum DC Current Gain:
100
Mounting Type:
Through Hole
Maximum Power Dissipation:
625 mW
Maximum Collector Emitter Voltage:
30 V
Height:
5.33mm
Minimum Operating Temperature:
-55 °C
Current - Collector (Ic) (Max):
600 mA
HTSUS:
8541.21.0075
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10mV
Frequency - Transition:
300MHz
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max):
30 V
Transistor Type:
NPN
Package:
Bulk
Current - Collector Cutoff (Max):
10nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
625 mW
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is Fairchild NPN Transistor 0.6 A 30 V 3-Pin TO-92 manufactured by Fairchild Semiconductor. The manufacturer part number is PN2222TF. The given dimensions of the product include 5.2 x 4.19 x 5.33mm. The product has a maximum 1 v collector emitter saturation voltage . Furthermore, the product is 4.19mm wide. The product offers single transistor configuration. It carries 100 mhz of maximum operating frequency. The package is a sort of to-92. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a npn type. Additionally, it has 60 v maximum collector base voltage. In addition, the product has a maximum 2 v base emitter saturation voltage . It features a 5 v of maximum emitter base voltage. Its accurate length is 5.2mm. Moreover, it has a maximum DC collector current of 0.6 a. It contains 3 pins. It features up to 100 of minimum DC current gain. The product is available in through hole configuration. Provides up to 625 mw maximum power dissipation. Whereas features a 30 v of collector emitter voltage (max). In addition, the height is 5.33mm. Whereas, the minimum operating temperature of the product is -55 °c. The maximum collector current includes 600 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. Furthermore, 100 @ 150ma, 10mv is the minimum DC current gain at given voltage. The transition frequency of the product is 300mhz. The 1v @ 50ma, 500ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 30 v. It is shipped in bulk package . In addition, 10na (icbo) is the maximum current at collector cutoff. to-92-3 is the supplier device package value. The maximum power of the product is 625 mw. The product is designated with the ear99 code number.

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PN2222, NPN Epitaxial Silicon Transistor, General Purpose Transistor Data Sheet(Technical Reference)

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