Minimum DC Current Gain:
25
Transistor Type:
PNP
Dimensions:
4.58 x 3.86 x 4.58mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
1 W
Maximum Collector Emitter Saturation Voltage:
-0.5 V
Maximum Collector Emitter Voltage:
45 V
Maximum Operating Frequency:
100 MHz
Height:
4.58mm
Width:
3.86mm
Length:
4.58mm
Package Type:
TO-92
Number of Elements per Chip:
1
Maximum DC Collector Current:
1 A
Maximum Emitter Base Voltage:
-5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
1 A
HTSUS:
8541.29.0075
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 150mA, 2V
Frequency - Transition:
100MHz
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max):
45 V
Transistor Type:
PNP
Package:
Bulk
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-92-3
Power - Max:
1 W
ECCN:
EAR99
