Minimum DC Current Gain:
60
Transistor Type:
NPN
Dimensions:
15.8 x 5 x 20.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
100 W
Maximum Collector Base Voltage:
200 V
Maximum Collector Emitter Voltage:
140 V
Maximum Operating Frequency:
20 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
TO
Number of Elements per Chip:
1
Maximum DC Collector Current:
20 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
12 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
140 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-3P-3, SC-65-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 1A, 5V
Frequency - Transition:
20MHz
Vce Saturation (Max) @ Ib, Ic:
700mV @ 700mA, 7A
REACH Status:
REACH Unaffected
Transistor Type:
NPN
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
14 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3P
Power - Max:
100 W
Base Product Number:
2SD1047
ECCN:
EAR99
