ON Semiconductor DTC124EET1G

DTC124EET1G ON Semiconductor
DTC124EET1G
ON Semiconductor

Product Information

Transistor Type:
NPN
Dimensions:
1.65 x 0.9 x 0.8mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
300 mW
Maximum Collector Emitter Voltage:
50 V
Maximum Emitter Base Voltage:
6 V
Package Type:
SOT-416 (SC-75)
Number of Elements per Chip:
1
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
DTC124
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 200mW Surface Mount SC-75, SOT-416
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 5mA, 10V
Transistor Type:
NPN - Pre-Biased
Mounting Type:
Surface Mount
Resistor - Base (R1):
22 kOhms
Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
Supplier Device Package:
SC-75, SOT-416
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
22 kOhms
Power - Max:
200mW
Customer Reference:
Package / Case:
SC-75, SOT-416
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is DTC124EET1G. The transistor is a npn type. The given dimensions of the product include 1.65 x 0.9 x 0.8mm. The product is available in surface mount configuration. Provides up to 300 mw maximum power dissipation. Whereas features a 50 v of collector emitter voltage (max). It features a 6 v of maximum emitter base voltage. The package is a sort of sot-416 (sc-75). It consists of 1 elements per chip. It contains 3 pins. The product offers single transistor configuration. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: dtc124. It features pre-biased bipolar transistor (bjt) npn - pre-biased 50v 100ma 200mw surface mount sc-75, sot-416. Furthermore, 60 @ 5ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn - pre-biased type. Resistor - Base - 22 kohms. The 250mv @ 300µa, 10ma is the maximum Vce saturation. sc-75, sot-416 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 22 kohms. The maximum power of the product is 200mw. Moreover, the product comes in sc-75, sot-416. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Wafer Source Addition 26/Nov/2014(PCN Assembly/Origin)
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MUN(2,5)212, MMUN2212L, DTC1234Exx, NSBC124EF3(Datasheets)
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Copper Wire 29/Oct/2009(PCN Design/Specification)

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