STMicroelectronics MJE2955T

MJE2955T STMicroelectronics
MJE2955T
MJE2955T
STMicroelectronics

Product Information

Minimum DC Current Gain:
20
Transistor Type:
PNP
Dimensions:
9.15 x 10.4 x 4.6mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
75 W
Maximum Collector Base Voltage:
70 V
Maximum Collector Emitter Voltage:
-60 V
Maximum Operating Frequency:
2 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
-10 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
10 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
60 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 4A, 4V
Frequency - Transition:
2MHz
title:
MJE2955T
REACH Status:
REACH Unaffected
edacadModel:
MJE2955T Models
edacadModelUrl:
/en/models/603646
Transistor Type:
PNP
Vce Saturation (Max) @ Ib, Ic:
8V @ 3.3A, 10A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
14 Weeks
Current - Collector Cutoff (Max):
700µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Packaging:
Tube
Power - Max:
75 W
Base Product Number:
MJE2955
ECCN:
EAR99
RoHs Compliant
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This is manufactured by STMicroelectronics. The manufacturer part number is MJE2955T. It features up to 20 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 9.15 x 10.4 x 4.6mm. The product is available in through hole configuration. Provides up to 75 w maximum power dissipation. Additionally, it has 70 v maximum collector base voltage. Whereas features a -60 v of collector emitter voltage (max). It carries 2 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of to-220. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of -10 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. The maximum collector current includes 10 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 60 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. Furthermore, 20 @ 4a, 4v is the minimum DC current gain at given voltage. The transition frequency of the product is 2mhz. In addition, it is reach unaffected. The 8v @ 3.3a, 10a is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). It has a long 14 weeks standard lead time. In addition, 700µa is the maximum current at collector cutoff. to-220 is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 75 w. Moreover, it corresponds to mje2955, a base product number of the product. The product is designated with the ear99 code number.

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MJE2955T MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS Data Sheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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MJE2955T, MJE3055T(Datasheets)

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