Minimum DC Current Gain:
12
Transistor Type:
NPN
Dimensions:
9.15 x 10.4 x 4.6mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
9 W
Maximum Collector Base Voltage:
1600 V
Maximum Collector Emitter Voltage:
800 V
Maximum Emitter Base Voltage:
9 V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
4 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
4 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
800 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
12 @ 400mA, 5V
Frequency - Transition:
-
title:
BUL216
REACH Status:
REACH Unaffected
edacadModel:
BUL216 Models
edacadModelUrl:
/en/models/603663
Transistor Type:
NPN
Vce Saturation (Max) @ Ib, Ic:
3V @ 660mA, 2A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
14 Weeks
Current - Collector Cutoff (Max):
250µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220
Packaging:
Tube
Power - Max:
90 W
Base Product Number:
BUL216
ECCN:
EAR99
