Minimum DC Current Gain:
10
Transistor Type:
NPN
Dimensions:
20.15 x 15.75 x 5.15mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
125 W
Maximum Collector Emitter Voltage:
700 V
Maximum Emitter Base Voltage:
9 V
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum DC Collector Current:
8 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Current - Collector (Ic) (Max):
8 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Voltage - Collector Emitter Breakdown (Max):
700 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-247-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
10 @ 100mA, 5V
edacadModel:
BU508AW Models
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
1V @ 1.6A, 4.5A
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/1852124
Transistor Type:
NPN
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
14 Weeks
Current - Collector Cutoff (Max):
200µA
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-3
Power - Max:
125 W
Base Product Number:
BU508
ECCN:
EAR99
