ON Semiconductor BC856BDW1T1G

BC856BDW1T1G ON Semiconductor
BC856BDW1T1G
ON Semiconductor

Product Information

Transistor Type:
PNP
Dimensions:
0.9 x 2 x 1.25mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
380 mW
Maximum Collector Emitter Voltage:
65 V
Maximum Operating Frequency:
100 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Maximum DC Collector Current:
100 mA
Maximum Collector Base Voltage:
80 V
Pin Count:
6
Transistor Configuration:
Isolated
Manufacturer Standard Lead Time:
44 Weeks
Base Part Number:
BC856
Detailed Description:
Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
220 @ 2mA, 5V
Transistor Type:
2 PNP (Dual)
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
650mV @ 5mA, 100mA
Supplier Device Package:
SC-88/SC70-6/SOT-363
Voltage - Collector Emitter Breakdown (Max):
65V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
380mW
Customer Reference:
Package / Case:
6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is BC856BDW1T1G. The transistor is a pnp type. The given dimensions of the product include 0.9 x 2 x 1.25mm. The product is available in surface mount configuration. Provides up to 380 mw maximum power dissipation. Whereas features a 65 v of collector emitter voltage (max). It carries 100 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of sot-363 (sc-88). It consists of 2 elements per chip. Moreover, it has a maximum DC collector current of 100 ma. Additionally, it has 80 v maximum collector base voltage. It contains 6 pins. The product offers isolated transistor configuration. It has typical 44 weeks of manufacturer standard lead time. Base Part Number: bc856. It features bipolar (bjt) transistor array 2 pnp (dual) 65v 100ma 100mhz 380mw surface mount sc-88/sc70-6/sot-363. Furthermore, 220 @ 2ma, 5v is the minimum DC current gain at given voltage. The transistor is a 2 pnp (dual) type. The transition frequency of the product is 100mhz. The 650mv @ 5ma, 100ma is the maximum Vce saturation. sc-88/sc70-6/sot-363 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 65v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 380mw. Moreover, the product comes in 6-tssop, sc-88, sot-363. The maximum collector current includes 100ma. In addition, 15na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Dual General Purpose Transistors Data Sheet(Technical Reference)
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Datasheet BC856BDW1T1G(Technical Reference)
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Mult Dev Assembly 30/Jul/2020(PCN Assembly/Origin)
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BC85(6, 7, 8)xDW1T1 Series(Datasheets)
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Copper Wire 08/Jun/2009(PCN Design/Specification)

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