Transistor Type:
NPN
Dimensions:
26.4 x 20.3 x 5.3mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
200 W
Maximum Collector Emitter Voltage:
200 V
Maximum Operating Frequency:
30 MHz
Maximum Emitter Base Voltage:
7 V
Package Type:
TO-3BPL
Number of Elements per Chip:
1
Maximum DC Collector Current:
15 A
Maximum Collector Base Voltage:
230 V
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
43 Weeks
Base Part Number:
MJL3281
Detailed Description:
Bipolar (BJT) Transistor NPN 260V 15A 30MHz 200W Through Hole TO-264
DC Current Gain (hFE) (Min) @ Ic, Vce:
75 @ 5A, 5V
Transistor Type:
NPN
Frequency - Transition:
30MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 1A, 10A
Supplier Device Package:
TO-264
Voltage - Collector Emitter Breakdown (Max):
260V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
200W
Customer Reference:
Package / Case:
TO-264-3, TO-264AA
Current - Collector (Ic) (Max):
15A
Current - Collector Cutoff (Max):
50µA (ICBO)
Manufacturer:
ON Semiconductor
