Toshiba Semiconductor and Storage ULN2803APG,CN

ULN2803APG-CN Toshiba Semiconductor and Storage ULN2803APG,CN
Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
500mA
HTSUS:
8541.29.0075
Operating Temperature:
-40°C ~ 85°C (TA)
Package / Case:
18-DIP (0.300", 7.62mm)
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 350mA, 2V
edacadModel:
ULN2803APG,CN Models
Frequency - Transition:
-
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 500µA, 350mA
Voltage - Collector Emitter Breakdown (Max):
50V
edacadModelUrl:
/en/models/856431
Transistor Type:
8 NPN Darlington
Package:
Tube
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
-
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
18-DIP
Power - Max:
1.47W
Base Product Number:
ULN2803
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is ULN2803APG,CN. The maximum collector current includes 500ma. It is assigned with possible HTSUS value of 8541.29.0075. The product has -40°c ~ 85°c (ta) operating temperature range. Moreover, the product comes in 18-dip (0.300", 7.62mm). Furthermore, 1000 @ 350ma, 2v is the minimum DC current gain at given voltage. The 1.6v @ 500µa, 350ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50v. The transistor is a 8 npn darlington type. It is shipped in tube package . Its typical moisture sensitivity level is 1 (unlimited). The product is available in through hole configuration. 18-dip is the supplier device package value. The maximum power of the product is 1.47w. Moreover, it corresponds to uln2803, a base product number of the product. The product is designated with the ear99 code number.

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ULN2803, ULN2804 APG/AFWG(Datasheets)

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