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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN1C03FU-A(TE85L,F. It has typical 12 weeks of manufacturer standard lead time. Base Part Number: hn1c03. It features bipolar (bjt) transistor array 2 npn (dual) 20v 300ma 30mhz 200mw surface mount us6. Furthermore, 200 @ 4ma, 2v is the minimum DC current gain at given voltage. The transistor is a 2 npn (dual) type. The transition frequency of the product is 30mhz. The product is available in surface mount configuration. The 100mv @ 3ma, 30ma is the maximum Vce saturation. us6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 20v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 200mw. Moreover, the product comes in 6-tssop, sc-88, sot-363. The maximum collector current includes 300ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The toshiba semiconductor and storage's product offers user-desired applications.
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