Deliver to
United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN1B04FE-Y,LF. The maximum collector current includes 150ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 50v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-563, sot-666. Furthermore, 120 @ 2ma, 6v is the minimum DC current gain at given voltage. The transition frequency of the product is 80mhz. In addition, it is reach unaffected. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a 1 npn, 1 pnp type. The 250mv @ 10ma, 100ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). It has a long 12 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. es6 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 100mw. Moreover, it corresponds to hn1b04, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
Basket Total:
£ 0
