Toshiba Semiconductor and Storage RN2910FE,LXHF(CT

RN2910FE-LXHF-CT Toshiba Semiconductor and Storage RN2910FE,LXHF(CT
Toshiba Semiconductor and Storage

Product Information

Resistor - Base (R1):
4.7kOhms
HTSUS:
8541.21.0095
Current - Collector (Ic) (Max):
100mA
Resistor - Emitter Base (R2):
-
Package / Case:
SOT-563, SOT-666
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 5V
Frequency - Transition:
200MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max):
50V
Transistor Type:
2 PNP - Pre-Biased (Dual)
Package:
Tape & Reel (TR)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Qualification:
AEC-Q101
standardLeadTime:
12 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
ES6
Power - Max:
100mW
Base Product Number:
RN2910
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2910FE,LXHF(CT. Resistor - Base - 4.7kohms. It is assigned with possible HTSUS value of 8541.21.0095. The maximum collector current includes 100ma. Moreover, the product comes in sot-563, sot-666. Furthermore, 120 @ 1ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 200mhz. The 300mv @ 250µa, 5ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50v. The transistor is a 2 pnp - pre-biased (dual) type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). It has a long 12 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. The product is automotive, a grade of class. es6 is the supplier device package value. The maximum power of the product is 100mw. Moreover, it corresponds to rn2910, a base product number of the product. The product is designated with the ear99 code number.

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RN2910FE-11FE(Datasheets)

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