Base Part Number:
PBLS20
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 20V 100mA, 3A 100MHz 1.5W Surface Mount 8-SO
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 20mA, 5V / 150 @ 2A, 2V
Transistor Type:
1 NPN Pre-Biased, 1 PNP
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Resistor - Base (R1):
2.2kOhms
Vce Saturation (Max) @ Ib, Ic:
150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
Supplier Device Package:
8-SO
Voltage - Collector Emitter Breakdown (Max):
50V, 20V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
2.2kOhms
Power - Max:
1.5W
Customer Reference:
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Current - Collector (Ic) (Max):
100mA, 3A
Current - Collector Cutoff (Max):
1µA, 100nA
Manufacturer:
NXP USA Inc.