Toshiba Semiconductor and Storage RN2911(T5L,F,T)

RN2911-T5L-F-T- Toshiba Semiconductor and Storage RN2911(T5L,F,T)
Toshiba Semiconductor and Storage

Product Information

Resistor - Base (R1):
10kOhms
HTSUS:
8541.21.0095
Current - Collector (Ic) (Max):
100mA
Resistor - Emitter Base (R2):
-
Package / Case:
6-TSSOP, SC-88, SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 5V
Frequency - Transition:
200MHz
title:
RN2911(T5L,F,T)
Voltage - Collector Emitter Breakdown (Max):
50V
Manufacturer:
Toshiba Semiconductor and Storage
Transistor Type:
2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
US6
Packaging:
Tape & Reel (TR)
Power - Max:
200mW
Base Product Number:
RN2911
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2911(T5L,F,T). Resistor - Base - 10kohms. It is assigned with possible HTSUS value of 8541.21.0095. The maximum collector current includes 100ma. Moreover, the product comes in 6-tssop, sc-88, sot-363. Furthermore, 120 @ 1ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 200mhz. The maximum collector emitter breakdown voltage of the product is 50v. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a 2 pnp - pre-biased (dual) type. The 300mv @ 250µa, 5ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. us6 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 200mw. Moreover, it corresponds to rn2911, a base product number of the product. The product is designated with the ear99 code number.

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