Toshiba Semiconductor and Storage RN1970FE(TE85L,F)

RN1970FE-TE85L-F- Toshiba Semiconductor and Storage RN1970FE(TE85L,F)
Toshiba Semiconductor and Storage

Product Information

Resistor - Base (R1):
4.7kOhms
HTSUS:
8541.21.0095
Current - Collector (Ic) (Max):
100mA
Resistor - Emitter Base (R2):
-
Package / Case:
SOT-563, SOT-666
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 5V
Frequency - Transition:
250MHz
Voltage - Collector Emitter Breakdown (Max):
50V
Manufacturer:
Toshiba Semiconductor and Storage
Transistor Type:
2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
ES6
Packaging:
Tape & Reel (TR)
Power - Max:
100mW
Base Product Number:
RN1970
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1970FE(TE85L,F). Resistor - Base - 4.7kohms. It is assigned with possible HTSUS value of 8541.21.0095. The maximum collector current includes 100ma. Moreover, the product comes in sot-563, sot-666. Furthermore, 120 @ 1ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 250mhz. The maximum collector emitter breakdown voltage of the product is 50v. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a 2 npn - pre-biased (dual) type. The 300mv @ 250µa, 5ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. es6 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 100mw. Moreover, it corresponds to rn1970, a base product number of the product. The product is designated with the ear99 code number.

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RN1970FE-71FE(Datasheets)

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