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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1966FE(TE85L,F). Resistor - Base - 4.7kohms. It is assigned with possible HTSUS value of 8541.21.0095. The maximum collector current includes 100ma. Resistor - Emittor Base (R2) - 47kohms. Moreover, the product comes in sot-563, sot-666. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 250mhz. The 300mv @ 250µa, 5ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50v. The transistor is a 2 npn - pre-biased (dual) type. It is shipped in tape & reel (tr) package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. es6 is the supplier device package value. The maximum power of the product is 100mw. Moreover, it corresponds to rn1966, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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