Toshiba Semiconductor and Storage RN2712JE(TE85L,F)

RN2712JE-TE85L-F- Toshiba Semiconductor and Storage RN2712JE(TE85L,F)
Toshiba Semiconductor and Storage

Product Information

Resistor - Base (R1):
22kOhms
Current - Collector (Ic) (Max):
100mA
HTSUS:
8541.21.0095
RoHS Status:
RoHS Compliant
Resistor - Emitter Base (R2):
-
Package / Case:
SOT-553
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 5V
Frequency - Transition:
200MHz
Voltage - Collector Emitter Breakdown (Max):
50V
edacadModel:
RN2712JE(TE85L,F) Models
edacadModelUrl:
/en/models/4516042
Manufacturer:
Toshiba Semiconductor and Storage
Transistor Type:
2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
32 Weeks
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
ESV
Packaging:
Tape & Reel (TR)
Power - Max:
100mW
Base Product Number:
RN2712
ECCN:
EAR99
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2712JE(TE85L,F). Resistor - Base - 22kohms. The maximum collector current includes 100ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs compliant. Moreover, the product comes in sot-553. Furthermore, 120 @ 1ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 200mhz. The maximum collector emitter breakdown voltage of the product is 50v. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a 2 pnp - pre-biased (dual) (emitter coupled) type. The 300mv @ 250µa, 5ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). It has a long 32 weeks standard lead time. In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. esv is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 100mw. Moreover, it corresponds to rn2712, a base product number of the product. The product is designated with the ear99 code number.

Reviews

  • Be the first to review.

FAQs

Yes. You can also search RN2712JE(TE85L,F) on website for other similar products.
We accept all major payment methods for all products including ET11268407. Please check your shopping cart at the time of order.
You can order Toshiba Semiconductor and Storage brand products with RN2712JE(TE85L,F) directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Bipolar Transistor Arrays, Pre-Biased category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage RN2712JE(TE85L,F). You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage RN2712JE(TE85L,F).
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11268407 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11268407.
Yes. We ship RN2712JE(TE85L,F) Internationally to many countries around the world.